High-Speed Carrier Transport and Tunneling Devices
1. If the measured drift transit time τ_dd = 50 ps and the tunneling transit time τ_tun = 0.5 ps, what is the approximate speedup factor of tunneling?
2. In the Esaki diode I–V curve, the valley voltage V_V was measured at 0.35 V and the peak voltage V_P at 0.15 V. What does this indicate?
3. After simulation, if IMPATT diode oscillations are observed at 95 GHz, what determines this oscillation frequency?
4. If the barrier width W is reduced from 12 nm to 8 nm in a tunnel diode, the tunneling current will:
5. In simulations, the IMPATT diode shows an output power of 200 mW. Which parameter primarily influences this power?
6. For a semiconductor slab of length L, the drift transit time τ_dd can be expressed as:
7. During simulation, if PVCR = 10 is observed for a tunnel diode, what does it imply about device performance?
8. When simulating IMPATT diodes, a sudden phase delay between voltage and current indicates:
9. In high-frequency measurements, if a tunnel diode exhibits τ_tun ≈ 0.2 ps, what is its approximate cut-off frequency?